Bonded structures

ABSTRACT

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 16/724,017,filed Dec. 20, 2019, titled “BONDED STRUCTURES,” now U.S. Pat. No.10,879,207, which is a continuation of application Ser. No. 15/979,312,filed May 14, 2018, titled “BONDED STRUCTURES,” now U.S. Pat. No.10,546,832, which is a continuation of application Ser. No. 15/387,385,filed Dec. 21, 2016, titled “BONDED STRUCTURES,” now U.S. Pat. No.10,002,844, issued Jun. 19, 2018, the entire contents of which areincorporated herein by reference.

BACKGROUND Field

The field generally relates to bonded structures, and in particular, tobonded structures that provide improved sealing between two elements(e.g., two semiconductor elements).

Description of the Related Art

In semiconductor device fabrication and packaging, some integrateddevices are sealed from the outside environs in order to, e.g., reducecontamination or prevent damage to the integrated device. For example,some microelectromechanical systems (MEMS) devices include a cavitydefined by a cap attached to a substrate with an adhesive such assolder. However, some adhesives may be permeable to gases, such that thegases can, over time, pass through the adhesive and into the cavity.Moisture or some gases, such as hydrogen or oxygen gas, can damagesensitive integrated devices. Other adhesives, such as solder, createtheir own long term reliability issues. Accordingly, there remains acontinued need for improved seals for integrated devices.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic side sectional view of a bonded structure,according to various embodiments.

FIGS. 1B-1K are partial schematic sectional plan views of variousembodiments of an interface structure defined along a bonded interfaceof the bonded structure.

FIG. 2A is a schematic sectional plan view of an interface structure ofthe bonded structure shown in FIGS. 1A-1B.

FIG. 2B is a schematic sectional plan view of an interface structurehaving one or more electrical interconnects extending through the bondedinterface.

FIG. 2C is a schematic sectional plan view of the interface structure ofFIG. 1C.

FIG. 2D is a schematic sectional plan view of an interface structurehaving a plurality of conductive interface features disposed about acavity to define an effectively annular profile, with each conductiveinterface feature comprising a mostly annular profile.

FIG. 2E is a schematic sectional plan view of an interface structurehaving a plurality of conductive interface features disposed about acavity to define an effectively annular profile, wherein the pluralityof conductive features comprises a plurality of segments spaced apart bygaps.

FIG. 2F is a schematic side sectional view of a bonded structure,according to some embodiments.

FIG. 2G is a schematic side sectional view of a bonded structure,according to various embodiments.

FIGS. 2H and 2I are schematic plan views of interface structures thatcomprise conductive interface features including an array of conductivedots or other discrete shapes, as viewed from the plan view.

FIG. 3 is a schematic side sectional view of a portion of a bondedstructure that includes a crack stopper connected with the conductiveinterface features of the interface structure.

FIGS. 4A-4C are schematic plan views of bonded structures that increasetolerance for misalignments when corresponding interface features arebonded together.

FIGS. 5A-5D are schematic plan views of an interface structure thatincreases tolerance for misalignments when corresponding interfacefeatures on each semiconductor element are bonded together.

FIGS. 6A-6B are schematic plan views of an interface structure thatincreases tolerance for misalignments when corresponding interfacefeatures on each semiconductor element are bonded together, according toanother embodiment.

FIG. 7A is a schematic plan view of a conductive interface feature inwhich a plurality of inner regions of non-conductive interface featuresare disposed within a crosswise grid structure defined by intersectingconductive interface features.

FIG. 7B is a schematic plan view of a bonded interface structure formedby bonding two interface features.

FIG. 7C is a schematic plan view of the bonded interface structure ofFIG. 7B, with a plurality of electrical interconnects disposed withininner regions of the non-conductive interface feature.

FIG. 8 is a schematic diagram of an electronic system incorporating oneor more bonded structures, according to various embodiments.

DETAILED DESCRIPTION

Various embodiments disclosed herein relate to interface structures thatconnect two elements (which may comprise semiconductor elements) in amanner that effectively seals integrated devices of the semiconductorelements from the outside environs. For example, in some embodiments, abonded structure can comprise a plurality of semiconductor elementsbonded to one another along an interface structure. An integrated devicecan be coupled to or formed with a semiconductor element. For example,in some embodiments, the bonded structure can comprise amicroelectromechanical systems (MEMS) device in which a cap (a firstsemiconductor element) is bonded to a carrier (a second semiconductorelement). A MEMS element (the integrated device) can be disposed in acavity defined at least in part by the cap and the carrier.

In some arrangements, the interface structure can comprise one or moreconductive interface features disposed about the integrated device, andone or more non-conductive interface features to connect the first andsemiconductor elements and to define an effectively annular oreffectively closed profile. In some embodiments, the interface structurecan comprise a first conductive interface feature, a second conductiveinterface feature, and a solid state non-conductive interface featuredisposed between the first and second conductive interface features. Insome embodiments, each semiconductor element can comprise an associatedconductive interface feature, and the conductive interface features canbe directly bonded to one another to connect the two semiconductorelements.

FIG. 1A is a schematic side sectional view of a bonded structure 1,according to various embodiments. FIG. 2A is a schematic sectional planview of an interface structure 10 of the bonded structure 1 shown inFIGS. 1A-1B. The bonded structure 1 can include a first semiconductorelement 3 bonded to a second semiconductor element 2 along the interfacestructure 10. As explained herein, corresponding bonding layers 11 ofthe first and second semiconductor elements 3, 2 can be directly bondedto one another without an intervening adhesive. As explained below, theinterface structure 10 can include conductive interface features 12embedded in a surrounding non-conductive interface feature 14. Asexplained herein, the bonding layers 11 of each element 3, 2 can includeconductive and non-conductive interface features that can bond to definea seal. As shown in FIG. 1A, the interface features 12, 14 can extendvertically into the semiconductor elements (e.g., into the bondinglayers 11), such that the interface features 12, 14 can extend in adirection from one semiconductor element towards the other semiconductorelement, e.g., vertically relative to the bonded structure. The firstand second semiconductor elements can define a cavity 5 in which anintegrated device 4 is at least partially disposed. In the illustratedembodiment, the first semiconductor element 3 can comprise a cap that isshaped to define the cavity, or that is disposed over a cavity in thesecond semiconductor element 2. For example, the semiconductor element 3can comprise a wall 6 disposed about the integrated device 4 andseparating the cavity 5 from the outside environs. In variousembodiments, the wall 6 and cap can comprise a semiconductor material,such as silicon. In other embodiments, the wall 6 and cap can comprise apolymer, ceramic, glass, or other suitable material. The cavity 5 cancomprise an air cavity, or can be filled with a suitable fillermaterial. Although the first and second elements 2, 3 are describedherein as semiconductor elements, in other embodiments, the first andsecond elements 2, 3 can comprise any other suitable type of element,which may or may not comprise a semiconductor material. For example, theelements 2, 3 can comprise various types of optical devices in someembodiments that may not comprise a semiconductor material.

The second semiconductor element 2 can comprise a carrier having anexterior surface 9 to which the first semiconductor element 3 is bonded.In some embodiments, the carrier can comprise a substrate, such as asemiconductor substrate (e.g., a silicon interposer with conductiveinterconnects), a printed circuit board (PCB), a ceramic substrate, aglass substrate, or any other suitable carrier. In such embodiments, thecarrier can transfer signals between the integrated device 4 and alarger packaging structure or electronic system (not shown). In someembodiments, the carrier can comprise an integrated device die, such asa processor die configured to process signals transduced by theintegrated device 4. In the illustrated embodiment, the integrateddevice 4 comprises a MEMS element, such as a MEMS switch, anaccelerometer, a gyroscope, etc. The integrated device 4 can be coupledto or formed with the first semiconductor element 3 or the secondsemiconductor element 2.

In some configurations, it can be important to isolate or separate theintegrated device die 4 from the outside environs, e.g., from exposureto gases and/or contaminants. For example, for some integrated devices,exposure to moisture or gases (such as hydrogen or oxygen gas) candamage the integrated device 4 or other components. Accordingly, it canbe important to provide an interface structure 10 that effectively orsubstantially seals (e.g., hermetically or near-hermetically seals) thecavity 5 and the integrated device 4 from gases. As shown in FIGS. 1Aand 2A, the interface structure 10 can be arranged to prevent gases frompassing through the interface structure 10 from an outer surface 8 ofthe structure 1 to an inner surface 7 of the structure 1.

The disclosed embodiments can utilize materials that have low gaspermeation rates and can arrange the materials so as to reduce oreliminate the entry of gases into the cavity 5. For example, thepermeation rate of some gases (such as hydrogen gas) through metals maybe significantly less that the permeation rate of gases through othermaterials (such as dielectric materials or polymers). Hydrogen gas, forexample, may dissociate into its component atoms at or near the outersurface 8. The dissociated atoms may diffuse through the wall 6 orinterface structure 10 and recombine at or near the inner surface 7. Thediffusion rate of hydrogen gas through metal can be approximatelyproportional to the square root of the pressure. Other gases, such asrare gases, may not permeate metals at all. By way of comparison, gasesmay pass through polymer or glass (silicon oxide) materials faster(e.g., proportional to the pressure) since the gas molecules may passthrough without dissociating into atoms at the outer wall 8.

Accordingly, the embodiments disclosed herein can beneficially employmetal that defines an effectively annular or closed pattern (see FIGS.2A-2E) about the integrated device 4 to seal an interior region of thebonded structure (e.g., the cavity 5 and/or integrated device 4) fromthe outside environs and harmful gases. Beneficially, in someembodiments, the metal pattern can comprise a completely closed looparound the integrated device 4, which may improve sealing relative toother arrangements. In some embodiments, the metal pattern can comprisean incompletely annular pattern, e.g., mostly or partially annular,about the device 4, such that there may be one or more gaps in themetal. Since the permeation rate of gases through metals (such ascopper) is less than the permeation rate of gases through dielectric ornon-conductive materials (such as silicon oxide, silicon nitride, etc.),the interface structure 10 can provide an improved seal for an interiorregion of the bonded structure 1.

However, in some embodiments, it may be undesirable to utilize aninterface structure 10 that includes only metal or a significant widthof metal lines. If the interface structure 10 includes wide metal linesor patterns, then the metal may experience significant dishing duringchemical mechanical polishing (CMP) or other processing steps. Dishingof the metal lines can adversely affect ability to bond the metal linesof first semiconductor element 3 to the second semiconductor element 2,particularly when employing direct metal-to-metal bonding techniques.Accordingly, in various embodiments, the interface structure 10 caninclude one or more conductive interface features 12 embedded with orotherwise adjacent to one or more non-conductive interface features 14.The conductive interface features can provide an effective barrier so asto prevent or reduce the permeation of gases into the cavity 5 and/or tothe integrated device 4. Moreover, the conductive interface features canbe made sufficiently thin and can be interspersed or embedded with thenon-conductive interface features so as to reduce or eliminate thedeleterious effects of dishing.

In some embodiments disclosed herein, the interface structure 10 can bedefined by first interface features on the first semiconductor elementand second interface features on the second semiconductor element. Thefirst interface features (including conductive and non-conductivefeatures) can be bonded to the corresponding second interface featuresto define the interface structure 10. In some embodiments, the interfacestructure 10 can comprise a separate structure that is separately bondedto the first semiconductor element 3 and the second semiconductorelement 2. For example, in some embodiments, the wall 6 may be providedas a separate open frame with a generally planar semiconductor element 3provided facing the frame. A second interface structure (not shown) cancomprise an intervening structure that is directly bonded without anintervening adhesive between the open frame and semiconductor element 3thereby forming a similar enclosed cavity 5 to that shown in FIG. 1A.The interface structure(s) 10 may provide mechanical and/or electricalconnection between the first and second semiconductor elements 3, 2. Insome embodiments, the interface structure 10 may provide only amechanical connection between the elements 3, 2, which can act to sealthe cavity 5 and/or the integrated device 4 from the outside environs.In other embodiments, the interface structure 10 may also provide anelectrical connection between the elements 3, 2 for, e.g., groundingand/or for the transmission of electrical signals. As explained in moredetail below in connection with FIGS. 4A-7C, the conductive interfacefeatures can be direct bonded to one another without an interveningadhesive and without application of pressure or a voltage. For example,bonding surfaces (e.g., bonding layers 11) of first and second interfacefeatures can be prepared. The bonding surfaces can be polished orplanarized, activated, and terminated with a suitable species. Forexample, in various embodiments, the bonding surfaces can be polished toa root-mean-square (rms) surface roughness of less than 1 nm, e.g., lessthan 0.5 nm. The polished bonding surfaces can be activated by a slightetch or plasma termination. In various embodiments, the bonding surfacescan terminated with nitrogen, for example, by way of etching using anitrogen-containing solution or by using a plasma etch with nitrogen. Asexplained herein, the bonding surfaces can be brought into contact toform a direct bond without application of pressure. In some embodiments,the semiconductor elements 3, 2 can be heated to strengthen the bond,for example, a bond between the conductive features. Additional detailsof direct bonding methods may be found at least in U.S. Pat. Nos.9,385,024; 9,391,143; and 9,431,368, the entire contents of which areincorporated by reference herein in their entirety and for all purposes.In some embodiments, the conductive interface features of both elements3, 2 and the non-conductive interface features of both elements 3, 2 aresimultaneously directly bonded to one another.

It should be appreciated that, although the illustrated embodiment isdirected to a MEMS bonded structure, any suitable type of integrateddevice or structure can be used in conjunction with the disclosedembodiments. For example, in some embodiments, the first and secondsemiconductor elements can comprise integrated device dies, e.g.,processor dies and/or memory dies. In addition, although the disclosedembodiment includes the cavity 5, in other arrangements, there may notbe a cavity. For example, the embodiments disclosed herein can beutilized with any suitable integrated device or integrated device die inwhich it may be desirable to seal active components from the outsideenvirons and gases. Moreover, the disclosed embodiments can be used toaccomplish other objectives. For example, in some arrangements, thedisclosed interface structure 10 can be used to provide anelectromagnetic shield to reduce or prevent unwanted electromagneticradiation from entering the structure 1, and/or to prevent various typesof signal leakage. Of course, the cavity may be filled with any suitablefluid, such as a liquid, gas, or other suitable substance which mayimprove the thermal, electrical or mechanical characteristics of thestructure 1.

FIGS. 1B-1K are schematic, partial, sectional plan views of variousembodiments of the interface structure 10. It will be understood thatthe illustrated patterns can extend completely annularly or incompletelyannularly (e.g., mostly annularly), around the protected region, such asthe cavity 5 of FIG. 1A, to define an effectively annular or effectivelyclosed profile. As used herein, effectively annular structures mayinclude round annular structures, as well as non-rounded annularstructures that define an effectively closed profile (e.g., square orother polygon). As shown in FIGS. 1B-1K, the interface structure 10 cancomprise one or a plurality of conductive interface features 12 and oneor a plurality of non-conductive interface features 14. As shown in FIG.1A, the conductive and non-conductive features 12, 14 can extendvertically through portions of the first and/or second semiconductorelements 3, 2, e.g., vertically through portions of the bonding layer11. For example, the conductive and non-conductive features 12, 14 canextend vertically through the first and/or second semiconductor elements3, 2 (e.g., in a direction non-parallel or perpendicular to the majorsurface of the semiconductor elements 3, 2) by a vertical distance of atleast 0.05 microns, at least 0.1 microns, at least 0.5 microns, or atleast 1 micron. For example, the conductive and non-conductive features12, 14 can extend vertically through the first and/or secondsemiconductor elements 3, 2 by a vertical distance in a range of 0.05microns to 5 microns, in a range of 0.05 microns to 4 microns, in arange of 0.05 microns to 2 microns, or in a range of 0.1 microns to 5microns. By extending the conductive and non-conductive features 12, 14through portions of the first and/or second semiconductor elements 3, 2,the conductive and non-conductive features 12, 14 can provide a sealwithout gaps between the semiconductor elements 3, 2 and the interfacestructure 10. The conductive and non-conductive features 12, 14 providedon semiconductor elements 3, 2 may provide generally planar surfaces forbonding the two semiconductor elements.

The conductive interface feature 12 can comprise any suitable conductor,such as a metal. For example, the conductive interface feature 12 cancomprise copper, aluminum, or any other suitable metal that issufficiently impermeable to fluids/gases, such as air, hydrogen,nitrogen, water, moisture, etc. The non-conductive interface feature 14can comprise any suitable non-conductive material, such as a dielectricor semiconductor material. For example, the non-conducive interfacefeature 14 can comprise silicon oxide in some embodiments. Beneficially,the use of both a conductive interface feature 12 and a non-conductiveinterface feature 14 can provide improved sealing to prevent gases frompassing from the outside environs into the cavity 5 and/or to the device4. As explained above, conductors such as metals may generally provideimproved sealing for many gases. However, some non-conductive materials(e.g., dielectrics) may be less permeable to certain gases thanconductors, metals, or semiconductors. Structurally mixing theconductive features 12 with the non-conductive features 14 may provide arobust seal to prevent many different types of gases and other fluidsfrom entering the cavity and/or affecting the device 4.

In the embodiment of FIG. 1B, only one conductive interface feature 12,which may be completely annular, is provided. The conductive interfacefeature 12 can be embedded in one or more non-conductive interfacefeatures 14 to define an effectively annular or effectively closedprofile. For example, in some embodiments, the conductive interfacefeature 12 can be embedded in a bulk non-conductive material. In otherembodiments, layers of non-conductive material can be provided onopposing sides of the conductive interface feature 12. As shown in FIG.2A, the conductive interface feature 12 can extend around the cavity 5and/or the integrated device 4 in a completely annular pattern. In FIG.2A, for example, the conductive interface feature 12 extends in acomplete annulus, or closed shape, about the cavity 5 and/or device 4,such that the non-conductive material of the non-conductive feature 14does not cross or intersect the conductive interface feature 12. Inother embodiments, however (for example, see description of FIGS. 2D and2E below), there may be one or more gaps between portions of theconductive interface feature 12, but without a direct path to the cavity5. Individual elements of the conductive interface feature 12 can beincompletely annular in some embodiments. For example, individualelements of the conductive interface feature 12 can be mostly annular,e.g., extend about the cavity 5 and/or the integrated device 4 by atleast 180°, at least 270°, at least 350°, or at least 355° (e.g., 360°),while cooperating to define an effectively annular or closed interfacestructure 10. Further, as explained above, the conductive interfacefeature 12 can extend vertically into and can be embedded in portions ofthe wall 6 and/or corresponding portions of the second semiconductorelement 2.

The structure of FIG. 1A, including any of the example patterns of FIGS.1B-1K, can be formed, for example, by semiconductor fabricationtechniques, such as by forming metal lines on a substrate by deposition,patterning and etching and depositing oxide thereover, or by damasceneprocessing. Desirably, the metal lines to be bonded are formed flushwith surrounding non-conductive material, or slightly (e.g., 0.5 nm to20 nm) recessed or protruding from the non-conductive material. Annularor mostly annular patterns of metal lines can be formed on bothsemiconductor elements 3, 2 using semiconductor processing, for directlybonding to one another and creating an effective metal seal against gasdiffusion.

The interface structure 10 can have an interface width to in a range of1 micron to 1 mm. The conductive interface feature 12 can have aconductor width t_(c) in a range of 0.1 microns to 50 microns. Thenon-conductive interface feature 14 can have non-conductor widths t_(i)in a range of 0.1 micron to 1 mm. As explained above, the interfacestructure 10 disclosed in FIG. 1B can beneficially provide an effectiveseal against gases entering the cavity 5 and/or interacting with thedevice 4. Moreover, the interface structure 10 disclosed herein can bethinner than other types of bonds or interfaces, which canadvantageously reduce the overall package footprint.

Turning to FIG. 1C, the interface structure 10 can include a pluralityof conductive interface features 12 and an intervening solid state(e.g., non-gaseous) non-conductive interface feature 14 disposed betweenadjacent conductive interface features 12. FIG. 2C is a schematic planview of the interface structure 10 shown in FIG. 1C. As with theimplementation of FIG. 1B, the interface structure 12 can be disposedabout the integrated device 4 and can comprise conductive features 12arranged in an effectively annular or closed profile (e.g., a completeor incomplete annulus in various arrangements) to connect the firstsemiconductor element 3 and the second semiconductor element 2. In FIGS.1C and 2C, the conductive features 12 comprise at least one complete orabsolute annulus. In other embodiments, the conductive features can beshaped differently, but can be arranged to define an effectively annularor closed profile. The use of multiple conductive features 12 canprovide multiple layers of highly impermeable material so as to reducethe inflow of gases into the cavity 5. Utilizing multiple thinconductive features 12 spaced by the non-conductive features 14,compared to wider features, can reduce the effects of dishing due topolishing for a given degree of overall impermeability. Thus, in variousembodiments, multiple conductive features 12 can be arranged around oneanother, for example concentrically, mostly or completely about thedevice 4 and/or the cavity 5 to provide an effective gas seal.

Moving to FIG. 1D, in some embodiments, the conductive interfacefeatures 12 can comprise a plurality of annular conductors 12A disposedabout the cavity 5 and/or device 4 in an effectively annular or closedpattern, and a plurality of crosswise conductors 12B connecting adjacentannular conductors 12A. Advantageously, the use of annular and crosswiseconductors 12A, 12B can provide increased contact area forimplementations that utilize direct bonding (explained below), and canprovide an improved gas seal due to the beneficial permeation propertiesof the conductive material. As with the embodiments of FIGS. 1B-1C, inFIG. 1D, the conductive interface features 12 can delimit a closed loopsuch that the non-conductive features 14 do not intersect or cross theconductive features 12.

FIGS. 1E-1G illustrate conductive interface features 12 having a kinked,annular profile, in which a plurality of conductive segments 112 a-112 care connected end-to-end and angled relative to adjacent segments. Aswith the embodiments of FIGS. 1B-1D, the features 12 can be disposedabout the cavity 5 and/or device 4 in an effectively annular or closedpattern, e.g., in a complete annulus. The kinked profiles illustrated inFIGS. 1E-1G can comprise a first segment 112 a and a second segment 112c spaced apart from one another in a transverse direction. The first andsecond segments 112 a, 112 c can be connected by an interveningtransverse segment 112 b. The first and second segments 112 a, 112 c canbe oriented along a direction generally parallel to the at leastpartially annular pathway around the cavity 5 and/or integrated device4. The transverse segment 112 c can be oriented transverse ornon-parallel to the first and second segments 112 a, 112 c. In someembodiments, the non-conductive interface features 14 may not cross theconductive features 12.

The kinked annular profile of the conductive interface features 12 canfacilitate direct bonding with increased tolerance for misalignment, ascompared with features 12 that are straight or non-kinked, whilemaintaining the benefits of narrow lines with respect to the effects ofdishing after polishing. The kinked profile can include any number ofconductive interface features 12. For example, FIG. 1E illustrates akinked profile with a single conductive interface feature 12. FIG. 1Fillustrates a plurality of conductive interface features 12 spaced aparttransversely by an intervening non-conductive interface feature 14. Aswith FIG. 1D, in FIG. 1G, spaced apart annular conductors 12A can bejoined by crosswise conductors 12B. Skilled artisans would appreciatethat other patterns may be suitable.

FIGS. 1H-1K illustrate conductive interface features 12 having anirregular or zigzag annular profile, in which a plurality of conductivesegments 112 a-112 f are connected end-to-end and angled relative toadjacent segments by way of one or more bend regions 11. As shown inFIGS. 1H-1K, the segments 112 a-112 f may be arranged in an irregularpattern, in which the segments 112 a-112 f are angled at differentorientations and/or have different lengths. In other arrangements, thesegments 112 a-112 f may be arranged in a regular pattern at angles thatare the same or periodic along the annular profile. In still otherarrangements, the conductive features 12 can be curved or otherwisenon-linear. These features may also increase tolerance for misalignment,relative to straight line segments, while still employing relativelynarrow lines that are less susceptible to dishing and therefore earlierto employ in direct metal-to-metal bonding.

FIG. 2B is a schematic sectional plan view of an interface structure 10having one or more electrical interconnects extending through theinterface structure 10. As with FIG. 2A, the conductive feature(s) 12can be disposed within the interface structure 10 about the cavity 5and/or integrated device 4 to define an effectively annular or closedprofile, e.g., a completely annular profile. The conductive feature(s)12 can comprise elongate feature(s) with a length greater than a width(e.g., with a length of at least five times the width, or at least tentimes the width). Unlike the interface structure 10 shown in FIG. 2A,however, the interface structure 10 of FIG. 2B includes one or aplurality of electrical interconnects 20 extending vertically throughone or more non-conductive interface features 14. The electricalinterconnect 20 can be in electrical communication with the integrateddevice 4 and/or other components of the bonded structure 1 so as totransfer signals between the various components of the structure 1. Insome embodiments, the electrical interconnect 20 can extend from thefirst semiconductor element 3 to the second semiconductor element 2. Asshown in FIG. 2B, the electrical interconnect 20 can be spaced inwardlyand electrically separated from the conductive interface feature 12,which itself can also serve to electrically connect circuits in thefirst and second semiconductor elements 3, 2. In other embodiments, theelectrical interconnect 20 can be spaced outwardly from the conductiveinterface feature 12. In still other embodiments, as explained below,the electrical interconnect 20 can extend through interveningnon-conductive interface features 14 disposed between a plurality ofconductive interface features 12.

The electrical interconnects 20 can provide electrical communicationbetween the semiconductor elements 3, 2 through the interface structure10. Providing the interconnects 20 in a direction non-parallel ortransverse to the interface structure 10 can therefore enable theinterface structure 10 to act as both a mechanical and electricalconnection between the two semiconductor elements 3, 2. Theinterconnects 20 can comprise any suitable conductor, such as copper,gold, etc. The interconnects 20 can comprise conductive traces orthrough-silicon vias in various arrangements. Moreover, as noted above,the interface features 12 may also serve as annular or mostly annularelectrical interconnects, with or without the conventional interconnects20.

FIG. 2D is a schematic sectional plan view of an interface structure 10having a plurality of conductive interface features 12A, 12B disposedabout a cavity 5 to define an effectively annular or closed profile,with each conductive interface feature 12A, 12B comprising anincompletely annular feature, e.g., a mostly annular feature extendingmore than 180°. For example, as shown in FIG. 2D, each conductiveinterface feature 12A, 12B can comprise a U-shaped structure, with thefeature 12B disposed inwardly relative to the feature 12A by anon-conductive gap 39. Thus, in FIG. 2D, each conductive interfacefeature 12A, 12B may comprise a mostly annular profile, but with the gap39 between the two interface features 12A, 12B such that any one of theinterface features 12A, 12B does not necessarily define a closed loop.The structure 10 shown in FIG. 2D may still be effective at reducing thepermeation of gases into cavity 5 and/or device 4, since the pattern ofconductive interface features 12A, 12B combine to create an effectivelyannular or effectively closed structure about the cavity 5. Some gas maypermeate through the gap 39, but the gas would have a very long paththrough the non-conductive material before it could reach the cavity 5and/or contact the device 4, so as to overcome the higher diffusivity ofgases in the non-conductive material 14 relative to the conductivematerial of the conductive interface features 12A, 12B. It should beappreciated that although two features 12A, 12B are shown herein, anysuitable number of features 12 can be used.

FIG. 2E is a schematic sectional plan view of an interface structure 10having a plurality of conductive interface features 12 disposed about acavity 5 to define an effectively annular or closed profile, wherein theplurality of conductive features 12 comprises a plurality of segmentsspaced apart by non-conductive gaps 39. The segments that define eachconductive interface feature 12 shown in FIG. 2E comprise linearsegments, but in other embodiments, the segments can be curved. In FIG.2E, some or all conductive interface features 12 on their own may notdefine a mostly annular pattern. Taken together, however, the patterndefined by the illustrated arrangement of conductive interface features12 may define an effectively annular or closed pattern. Thus, eventhough a particular conductive interface feature 12 may not be annular,the arrangement of multiple conductive interface features 12 can definean effectively annular or closed pattern to seal an interior region ofthe bonded structure from gas entering the interior region from theoutside environs, as shown in FIG. 2E.

The embodiments of FIGS. 2A-2E can accordingly comprise interfacestructures 10 that include conductive and non-conductive interfacefeatures 12, 14 that collectively define an effectively annular orclosed diffusion barrier. For example, a particular conductive interfacefeature 12 can comprise a complete annulus or an incomplete annulus(e.g., mostly annular) that is arranged with other conductive andnon-conductive interface features so as to define an effectively annularpattern or diffusion barrier. In some embodiments, the conductiveinterface feature can comprise other shapes, such as straight or curvedsegments, that are arranged about the cavity 5 and/or device 4 so as todefine an effectively annular pattern or diffusion barrier. Moreover,the embodiments of FIGS. 2D and 2E can advantageously provide multipleconductive segments that can each serve as separate electricalconnections, for example, for separate signal line connections, groundline connections and power line connections. Together those segments canprovide effectively annular conductive patterns to serve as diffusionbarriers. The effectively annular patterns described herein canbeneficially provide a longer distance over which gases travel to reachthe sensitive components of the structure 1, which can reduce thepermeability of the structure 1.

FIG. 2F is a schematic side sectional view of a bonded structure 1,according to some embodiments. FIG. 2F is similar to FIG. 1A, except inFIG. 2F, the first semiconductor element 3 can comprise one or aplurality of electronic components 38 formed or coupled with variousportions of the semiconductor element 3. For example, as illustrated,the semiconductor element 3 can comprise a plurality of electroniccomponents 38A-38C. The electronic components 38A-38C can comprise anysuitable type of electronic component. The electronic components 38 cancomprise any suitable type of device, such as integrated circuitry(e.g., one or more transistors) or the like. In some embodiments, theelectronic components 38 can communicate with the device 4, the secondsemiconductor element 2, and/or other components by way of theinterconnects (see FIG. 2B) and/or by the conductive interface features12. For example, the electronic components 38 can communicate with thesecond semiconductor element 2 by way of one or more conductive traces36 that pass through the semiconductor element 3. The electroniccomponents 38 and the traces 36 can be defined by semiconductorprocessing techniques, such as deposition, lithography, etching, etc.and can be integrated with the semiconductor element 3. The traces, forexample, may be formed by conventional back-end-of-line interconnectmetallization through multiple metal levels. Moreover, as shown in FIG.2F, any of the embodiments disclosed herein can include one or aplurality of electronic components 37 formed (e.g., with semiconductorprocessing techniques) or coupled with the second semiconductor element2. The electronic components 37 can comprise any suitable type ofdevice, such as integrated circuitry or the like, and can communicatewith the device 4, the first semiconductor element 3, and/or othercomponents. For example, in some embodiments, one or more electroniccomponents 37A can be defined within the semiconductor element 2 (e.g.,buried within the semiconductor element 2 or exposed at the surface 9).In some embodiments, one or more electronic components 37B can bedefined at or on the surface 9 of the semiconductor element 2.

FIG. 2G is a schematic side sectional view of a bonded structure 1,according to various embodiments. FIG. 2G is similar to FIGS. 1A and 2F,except in FIG. 2G, there may not be a cavity defined between the firstand second semiconductor elements 3, 2. Rather, in the embodiment ofFIG. 2G, the first and semiconductor elements 3, 2 may be bonded to oneanother without an intervening cavity. In the illustrated embodiment, aswith the embodiments described herein, the semiconductor elements 3, 2can be bonded to one another by way of an interface structure 10 thatdefines an effectively annular pattern or profile about the interior ofthe elements 3, 2. As explained herein, the semiconductor elements 3, 2can be directly bonded to one another along at least the interfacestructure 10 to define the effectively annular profile, with conductiveand nonconductive interface features defined therein. The effectivelyannular profile of the interface structure 10 can comprise any of thepatterns disclosed herein. Even though there may be no cavity in thebonded structure 1 of FIG. 2G, the interface structure 10 may define aneffective seal so as to protect sensitive electronic circuits orcomponents 37 in the interior of the structure 1 from the outsideenvirons, including, e.g., gases. It should be appreciated that any ofthe embodiments disclosed herein may be used in conjunction with bondedstructures that do not include a cavity.

Moreover, as illustrated in FIG. 2G, the first semiconductor element 3can comprise one or more electronic components 38 formed at or near thesurface of the element 3, and/or within the body of the element 3. Thesecond semiconductor element 3 can also include one or more electroniccomponents 37 formed at or near the surface of the element 2, and/orwithin the body of the second semiconductor element 3. The electroniccomponents 37, 38 can comprise any suitable type of element, such aselectronic circuitry that includes transistors, etc. The components 37,38 can be disposed throughout the elements 3, 2 in any suitablearrangement. In the embodiment of FIG. 2G, the first and second elements3, 2 can comprise any combination of device dies, such as anycombination of processor dies, memory dies, sensor dies, etc. In theillustrated embodiment, the interface structure 10 can be disposed aboutthe periphery of the bonded structure 1 so as to seal the interior ofthe bonded structure 1 from the outside environs. In variousembodiments, therefore, the interior of the bonded structure 1, e.g.,the region within the effectively annular pattern defined by theinterface structure 10, may or may not be directly bonded. In theillustrated embodiment, some components 37, 38 may be disposed within aninterior region of the bonded structure 1, e.g., within the effectivelyclosed profile defined by the interface structure 10. A firstinterconnect of the first semiconductor element 3 and a secondinterconnect of the second semiconductor element 2 can be directlybonded to one another within the interior region of the bonded structure1 to connect components 37, 38 in the respective elements 3, 2. Inaddition, additional components may be disposed outside the interiorregion defined by the interface structure 10. Such additional components(such as integrated device dies) may also be directly bonded to oneanother outside the interior region.

FIGS. 2H and 2I are schematic plan views of interface structures 10 thatcomprise conductive interface features 12 including an array ofconductive dots, as seen from the plan view. In FIG. 2H, the conductiveinterface features 12 comprise a ring of closely spaced dots about thecavity 5 (or the interior of the bonded structure generally). In FIG.2I, the conductive interface features 12 comprise multiple rings ofclosely spaced dots, with an outer ring of features laterally offsetrelative to the inner ring of features so as to improve the sealabilityof the interface structure 10. Although two rings of features 12 areshown in FIG. 2I, it should be appreciated that the conductive features12 can comprise a mesh of dots or discrete shapes spaced from oneanother so as to define the effectively annular pattern. The conductiveinterface features 12 and the nonconductive interface feature 14 cancooperate to define an effectively annular or effectively closed patternthat connects two semiconductor elements. It should be appreciated that,although the dots shown in FIGS. 2H-2I are illustrated as rounded (e.g.,circular or elliptical), in other embodiments, the dots can comprise anysuitable discrete shapes such as polygons. Moreover, as explainedherein, in some embodiments, the conductive interface features 12 (e.g.,the dots) may only act as bonding mechanisms between the twosemiconductor elements 3, 2. In other embodiments, however, some or allconductive interface features 12 may act as electrical interconnects(such as the ends of the interconnects 20 or pads connected thereto) toprovide electrical communication between the semiconductor elements 3,2. It should be appreciated that the features of FIGS. 2H and 2I can becombined with the various other embodiments disclosed herein.

FIG. 3 is a schematic side sectional view of a portion of a bondedstructure 1 that includes a crack stopper 13 connected with theconductive interface features 12 of the interface structure 10. Thecrack stopper 13 includes alternating wider and narrower segments as itvertically connects through back-end-of-line interconnect structureswithin the die, and accordingly can prevent or reduce the propagation ofcracks in one of the semiconductor elements (e.g., the second element2). By introducing low K dielectrics into the back-end of the line(BEOL) interconnect layer of a functional device die, the fractureresistance of the dielectric may be substantially reduced and may becomparable or significantly lower than that of silicon. Therefore,preventing cracking and delamination of the low K dielectric layers atthe edge of a die may be challenging under the stresses that arise fromchip package interactions. Beneficially, cracking at the edge of thechip can be reduced by incorporating the patterned metal interfacestructures (e.g., the crack stopper 13) around the perimeter in the lowK dielectrics that act as a crackstop by increasing the fractureresistance near the edge of the chip.

FIGS. 4A-4C are schematic plan views of bonded structures 10 thatincrease tolerance for misalignments when corresponding interfacefeatures from each of the semiconductor elements 3, 2 are bondedtogether. In some embodiments, the bonded structures 10 of FIGS. 4A-4Ccan be arranged to provide an effective gas seal when correspondingconductive interface features 12, 12′ from adjacent semiconductorelements are misaligned. As explained herein, in various embodiments,the interface structure 10 can be defined by first interface featuresdisposed on the first semiconductor element 3 and second interfacefeatures disposed on the second semiconductor element 2. For example, asshown in FIGS. 4A-4C, a first conductive interface feature 12 and afirst non-conductive interface feature 14 can be disposed on the firstsemiconductor element 3. A second conductive interface feature 12′ and asecond non-conductive interface feature 14′ can be disposed on thesecond semiconductor element 2. The first and second interface featurescan comprise the materials described above in connection with FIGS.1A-2B. For example, in various embodiments, the first and secondconductive interface features 12, 12′ can comprise copper. In variousembodiments, the first and second non-conductive interface features 14,14′ can comprise silicon oxide.

As with the bonded structures 1 of FIGS. 1A-2B, in some embodiments, theinterface structure 10 of FIGS. 4A-4C can extend around the cavity 5and/or integrated device 4 to define an effectively annular pattern,e.g., the conductive features can delimit a complete annulus or anincomplete annulus that define an effectively annular pattern. Disposingthe interface structure 10 in an effectively annular pattern canadvantageously seal the cavity 5 and/or integrated device 4 from gasesentering the bonded structure 1. In other embodiments, however, theinterface structure 10 of FIGS. 4A-4C can be used as an interface forapplications other than, or in addition to, gas sealing. For example,the interface structure 10 of FIGS. 4A-4C can be used in any applicationto account for misalignment when conductive features are bonded to oneanother. In some embodiments, the interface structure 10 of FIGS. 4A-4Ccan provide one or more direct electrical and/or mechanical connectionsbetween the semiconductor elements. In various embodiments, theinterface structure 10 of FIGS. 4A-4C may or may not be disposed aboutthe integrated device 4 in an annular pattern. In some embodiments, forexample, the interface structure 10 may be disposed at a plurality ofdiscrete locations on the corresponding external surfaces of thesemiconductor elements, such as for the interconnects 20 described belowwith respect to FIG. 7C. In such embodiments, the interface structure 10can act as an electrical interconnection between the semiconductorelements. The first and second interface features can be bonded to oneanother in a variety of ways. In some embodiments, the first and secondinterface features can be directly bonded to one another without anintervening adhesive and without the application of pressure and/ortemperature.

In embodiments that utilize direct bonding for the interface structure10, bonding surfaces of the first and second interface features can beprepared. For example, a bonding surface of the first conductiveinterface feature 12 and the first non-conductive interface feature 14can be directly bonded to a corresponding bonding surface of the secondconductive interface feature 12′ and the second non-conductive interfacefeature 14′, without an intervening adhesive and without the applicationof pressure or a voltage. The bonding surfaces can be polished orplanarized, activated, and terminated with a suitable species. Thebonding surfaces can be brought into contact to form a direct bondwithout application of pressure. In some embodiments, the semiconductorelements 3, 2 can be heated to strengthen the bond, for example, a bondbetween the conductive features. Additional details of the directbonding processes used in conjunction with each of the disclosedembodiments may be found throughout U.S. Pat. Nos. 7,126,212; 8,153,505;7,622,324; 7,602,070; 8,163,373; 8,389,378; and 8,735,219, andthroughout U.S. patent application Ser. Nos. 14/835,379; 62/278,354;62/303,930; and Ser. No. 15/137,930, the contents of each of which arehereby incorporated by reference herein in their entirety and for allpurposes.

In the structure 10 of FIG. 4A, the conductive interface features 12,12′ are relatively thin, such that dishing from polishing can be avoidedand direct metal-to-metal bonding facilitated. If the respectiveinterface features are laterally misaligned, however, a conductive bond35 between the features 12, 12′ is relatively small. The conductivebonds 35 shown in FIG. 4A may comprise isolated regions of contact,which may provide an inadequate gas seal (and/or an inadequateelectrical connection).

Accordingly, as shown in FIGS. 4B-4C, the conductive interface features12, 12′ can be made sufficiently wide so as to ensure adequateconductivity of electrical connections and also provide a betterdiffusion barrer. The thick conductive features 12, 12′ of FIGS. 4B-4Ccan advantageously enable larger conductive bonds 35, and also improvethe gas sealing capabilities (and/or electrical connections) of theinterface structure 10. In FIG. 4B, for example, the thickness of theconductive features 12, 12′ can be made to be thicker than a maximummisalignment tolerance of the bonding procedure. Thus, if a bondingprocedure has a misalignment tolerance of T, then the lateral thicknessof the conductive interface features 12, 12′ can be greater than orequal to T. In various direct bonding procedures, for example, themisalignment tolerance T can be in a range of 0.1 microns to 25 microns.Dimensioning the thickness of the conductive feature 12, 12′ to equal orexceed the maximum misalignment tolerance T of the bonding process canensure that the conductive bond 35 forms a closed structure.

In the embodiment of FIG. 4C, the thickness of the conductive interfacefeatures 12, 12′ can be selected to be larger than the space providedfor the intervening non-conductive interface features 14, 14′. Thus, inFIG. 4C, the conductive features 12 can be thicker than thenon-conductive features 14, 14′. Dimensioning the conductive features 12in such a manner can ensure that the conductive features 12, 12′ matealong a continuous interface. Accordingly, the relatively thickconductive features 12, 12′ of FIGS. 4B-4C can provide effectiveconnection between conductive interface features 12, 12′ during bondingeven in the presence of misalignment, and a continuous interface canprovide an annular or mostly annular barrier to diffusion.

FIGS. 5A-5D are schematic plan views of an interface structure 10 thatincrease tolerance for misalignments when corresponding interfacefeatures 10A, 10B on each semiconductor element 3, 2 are bondedtogether, while providing an effective metal diffusion barrier. Asexplained above in connection with FIGS. 4A-4C, it can be important toaccount for misalignments when bonding (e.g., direct bonding) twocorresponding interface features 10A, 10B. The interface features 10A,10B can be disposed on exterior surfaces of the first and secondsemiconductor elements 3, 2, respectively. The interface features 10A,10B can comprise one or more conductive interface features 12, 12′,which can also be embedded in or coupled with one or more non-conductiveinterface features 14, 14′. The conductive interface features 12, 12′can be brought together and directly bonded without an interveningadhesive in some embodiments. In some embodiments, the non-conductiveinterface features 14, 14′ can also be directly bonded to one another.In other embodiments, an adhesive can be used to bond the elements. Theconductive features 12, 12′ can define a conductive bond 35 alongregions where the features 12, 12′ overlap with one another.

To increase tolerance for misalignments, the conductive interfacefeatures 12, 12′ can comprise a plurality of wide sections 16alternately arranged and connected with a plurality of narrow sections15. For example, as shown in FIG. 5A, each wide section 16 can beconnected between two narrow sections 15, and each narrow section 15 canbe connected between two wide sections 16. The narrow section 15 canhave a first width t in a range of 0.1 microns to 25 microns. The widesection can have a second width w less than t and in a range of 0.5microns to 50 microns. Moreover, as shown in FIG. 5A, the wide sections16 can be spaced from one another by a first distance g in which theintervening non-conductive interface feature 14 can be disposed. thewide and narrow sections 16, 15 can be connected end-to-end, the narrowsections 15 can have a length that is the same as the first distance g.The first distance g can be in a range of 0.1 microns to 50 microns. Thethin sections can be spaced from one another by a second distance h,which may also comprise a length of the wide sections 16. The seconddistance h can be in a range of 0.2 microns to 50 microns. Moreover, anoutermost edge of the wide sections 16 can be offset relative to anoutermost edge of the narrow sections 15 by a lateral offset x, which asexplained below can correspond to the bonding procedure's maximumalignment tolerance in the x direction. The lateral offset x can be in arange of 0.1 microns to 25 microns.

Advantageously, the wide segments 16 can be provided to improve the gassealing capabilities of the bonded structure 1, as explained above. Thenarrow segments 14 can be provided to reduce the effects of dishing thatmay occur due to polishing, thereby facilitating direct conductor toconductor bonding. FIG. 5B illustrates the interface structure 10 afterbonding in which there is little to no misalignment of the respectiveinterface features 10A, 10B. As shown in FIG. 5B, the conductivefeatures 12, 12′ completely overlap one another at a half-pitch offsetin the y-direction as shown in FIG. 5A such that the bonded conductiveregions provide closed pathways at a large conductive bond 35. As shownin FIG. 5B, in the case where there is little to no misalignment, theconductive features 12, 12′ completely overlap laterally at theconductive bond 35, i.e., parallel to the lateral offset x, because thelateral offset of the outermost edge of the wide sections 16 can beselected to correspond to the bonding procedures' maximum alignmenttolerance. For example, for a lateral misalignment tolerance x for aparticular bonding procedure, the first and second widths t, w can beselected to satisfy the relationship x<(w-012. For a longitudinalmisalignment tolerance y during bonding, for a particular bondingprocedure, the first and second distances g, h can be selected tosatisfy the relationship y<(h-g)/2. Satisfying these relationshipsensure that a continuous overlap, or bond line, between the conductivefeatures 12, 12′ of the different semiconductor elements 3, 2.

FIG. 5C illustrates the bonded interface structure 10 when the interfacefeature 10A, 10B are misaligned laterally by the misalignment tolerancex and longitudinally by the misalignment tolerance y. As shown in FIG.5C, even when the interface features 10A, 10B are misaligned by x and yfor a particular bonding procedure, the resulting bonded interfacestructure 10 comprises significant and continuous overlap between theconductive interface features 12, 12′ at the conductive bond 35, whichcan provide an effectively annular diffusion barrier, e.g., a completelyannular or mostly annular barrier to diffusion.

FIG. 5D illustrates the bonded interface structure 10 when the interfacefeatures 10A, 10B are misaligned laterally by the misalignment tolerancex plus the first width t, with longitudinal misalignment less than(h−g)/2. As shown in FIG. 5D, when there is longitudinal misalignmentless than (h−g)/2 (e.g., parallel to y), the bonded interface structure10 of FIG. 5D can accommodate lateral misalignments that are even largerthan the misalignment tolerance x of the bonding procedure, because theadditional width of the narrow sections 15 can contribute additionalbonding regions at the conductive bond 35 when there is longitudinalmisalignment less than (h−g)/2. While the overlapping bond region islaterally less wide than in FIG. 5C, the metal to metal bond interfaceremains continuous and provides a better diffusion barrier than, forexample, oxide.

FIGS. 6A-6B are schematic plan views of an interface structure 10 thatincreases tolerance for misalignments when corresponding interfacefeatures 10A, 10B on each semiconductor element 3, 2 are bondedtogether, according to another embodiment. In the embodiment of FIGS.6A-6B, the non-conductive interface features 14, 14′ can comprise aplurality of inner regions 114 a and a plurality of outer regions 114 b.The inner regions 114 a can be completely surrounded (in a horizontalplane) by the conductive interface features 12, 12′. In the illustratedembodiment, the plurality of the conductive interface features 12, 12′can comprise a number of blocks 17 that are disposed around (e.g.,completely around) the inner regions 114 a of the non-conductiveinterface regions 14, 14′. The outer regions 114 b of the non-conductiveinterface regions 14, 14′ can be disposed in gaps between adjacent outerblocks 17.

In some embodiments, a first width t₁ of the blocks 17 can be greaterthan a second width t₂ of the inner regions 114 a and/or the outerregions 114 b. For example, in some embodiments, the first width t₁ ofthe blocks 17 can be in a range of 0.2 microns to 25 microns. The secondwidth t₂ of the inner regions 114 a and/or the outer regions 114 b canbe in a range of 0. 1 microns to 20 microns. Dimensioning the blocks 17to be larger than the regions 114 a, 114 b can enable the conductivefeatures 12, 12′ to have significant overlapping conductive bond 35, asshown in the bonded interface structure 10 of FIG. 6B.

FIG. 7A is a schematic plan view of a conductive interface feature 10Ain which a plurality of inner regions 114 a of non-conductive interfacefeatures 14 are disposed within (surrounded by) a lattice. For example,the interface feature 10A shown in FIG. 7A comprises a crosswise gridstructure defined by intersecting conductive interface features 12. FIG.7B is a schematic plan view of a bonded interface structure 10 formed bybonding two interface features 10A, 10B. As shown in FIG. 7A, theconductive feature 12 can include a plurality of wide blocks 18interconnected by narrow conductive segments 19. The wide blocks 18 canprovide improved gas sealing capabilities, and the narrow conductivesegments 19 can be provided to avoid the negative effects of dishing dueto polishing procedures, thereby facilitating direct metal to metalbonds. In FIG. 7A, the blocks 18 and segments 19 are arranged in a gridin which the conductive features 12 are disposed perpendicular to oneanother. However, in other embodiments, the features 12 can be arrangednon-perpendicularly relative to one another.

In FIGS. 7A-7B, the blocks 18 can have a first width t₁ that is largerthan a second width t₂ of a gap G disposed between adjacent blocks 18.For example, in some embodiments, the first width t₁ can be in a rangeof 0.2 microns to 50 microns. The second width t₂ can be in a range of0.1 microns to 25 microns. As shown in FIG. 7B, spacing the blocks 18 insuch a manner can beneficially enable large regions of overlap betweenthe conductive features 12 along the conductive bond 35, and result inmultiple adjacent metal bond lines, which can be beneficial for sealingthe bonded structure 1 from gases.

Although the lattice shown in FIGS. 7A-7B comprises a grid ofintersecting conductive lines, in other embodiments, the lattice cancomprise curved, periodic, or irregular shapes. For example, in someembodiments, the lattice can comprise a honeycomb structure ofinterconnected polygons. In some embodiments, the lattice can comprise aplurality of triangles, a herringbone pattern, or any other suitablelattice of repeating shapes.

FIG. 7C is a schematic plan view of the bonded interface structure 10 ofFIG. 7B, with a plurality of electrical interconnects 20 disposed withinthe inner regions 114 a of the non-conductive interface features 14. Asexplained above in connection with FIG. 2B, it can be advantageous toincorporate additional conductive electrical interconnects 20 into theinterface structure 10. Doing so enables the bonded structure 1 toprovide a gas seal and electrical communication for a large number ofsignal, power and/or ground lines between the semiconductor elements 3,2. In the embodiment of FIG. 7C, for example, the conductive interfacefeatures 12 and the non-conductive interface features 14 can provide amechanical connection between the semiconductor elements 3, 2 that actsas an effective barrier to gases entering the structure. The conductivefeatures 12 can comprise elongate features with a length greater than awidth. The electrical interconnects 20 can be disposed within the innerregions 114 a and can be electrically isolated from the conductivefeatures 12. The interconnects can extend vertically from the firstsemiconductor element 3 to the second semiconductor element 2 throughthe non-conductive features 14 to provide electrical communicationbetween the semiconductor elements 3, 2. It will be understood that theeffectively annular patter, e.g., a completely or mostly annularpattern, created by overlap and bonding of the two conductive features12 can also serve as additional or sole electrical connection betweenthe two semiconductor elements 3, 2.

Thus, in the embodiments of FIGS. 4B-7C, the first semiconductor element3 can comprise a first pattern of repeating shapes formed fromconductive lines on an exterior surface of the first semiconductorelement 3. The first pattern can comprise a first conductive interfacefeature 12 spaced apart by a first spacing from a second conductiveinterface feature 12, with a first non-conductive interface feature 14being disposed between the first and second conductive interfacefeatures 12. The first conductive interface feature 12 can have a firstwidth that is greater than the first spacing. The second semiconductorelement 2 can have a second pattern of repeating shapes formed fromconductive lines on an exterior surface of the second semiconductorelement 2. The second pattern can comprise a third conductive interfacefeature 12 spaced apart by a second spacing from a fourth conductiveinterface feature 12, with a second non-conductive interface feature 14being disposed between the third and fourth conductive interfacefeatures 12. The third conductive interface feature 12 can have a secondwidth that is greater than the second spacing. The first and secondconductive interface features 12 can be bonded to the third and fourthconductive interface features 12 to define an interface structure 10.Even though the first and second patterns may be laterally offsetrelative to one another, the bonded first and second patterns cannevertheless delimit a continuous conductive bond region 35 along theinterface structure 10.

FIG. 8 is a schematic diagram of an electronic system 80 incorporatingone or more bonded structures 1, according to various embodiments. Thesystem 80 can comprise any suitable type of electronic device, such as amobile electronic device (e.g., a smartphone, a tablet computing device,a laptop computer, etc.), a desktop computer, an automobile orcomponents thereof, a stereo system, a medical device, a camera, or anyother suitable type of system. In some embodiments, the electronicsystem 80 can comprise a microprocessor, a graphics processor, anelectronic recording device, or digital memory. The system 80 caninclude one or more device packages 82 which are mechanically andelectrically connected to the system 80, e.g., by way of one or moremotherboards. Each package 82 can comprise one or more bonded structures1. The system 80 shown in FIG. 8 can comprise any of the bondedstructures 1 and associated interface structure 10 shown and describedherein.

In one embodiment, a bonded structure comprising is disclosed. Thebonded structure can include a first element having a first interfacefeature, and a second element having a second interface feature. Thebonded structure can include an integrated device coupled to or formedwith the first element or the second element. The first interfacefeature can be directly bonded to the second conductive interfacefeature to define an interface structure. The interface structure can bedisposed around the integrated device to define an effectively closedprofile to connect the first and second elements. The effectively closedprofile can substantially seal an interior region of the bondedstructure from gases diffusing into the interior region from the outsideenvirons.

In another embodiment, a bonded structure comprises a first element anda second element. The bonded structure can include an integrated devicecoupled to or formed within the first element or the second element. Aninterface structure can be disposed between the first element and thesecond element. The interface structure can comprise a first conductiveinterface feature extending in a direction from the first element to thesecond element, a second conductive interface feature extending in adirection from the first element to the second element, and a solidstate non-conductive interface feature disposed laterally between thefirst and second conductive interface features. The interface structurecan be disposed about the integrated device to define an effectivelyclosed profile to connect the first element and the second element.

In another embodiment, a bonded structure comprises a first element anda second element. An integrated device can be coupled to or formed withthe first element or the second element. An interface structure can bedisposed between the first element and the second element, the interfacestructure extending in a direction from the first element to the secondelement. The interface structure can include a first elongate conductiveinterface feature extending in a direction from the first element to thesecond element and a second elongate conductive interface featureextending in a direction from the first element to the second element.The first and second elongate conductive interface features can bespaced apart by an intervening non-conductive interface featureextending in a direction from the first element to the second element.Each of the first and second elongate conductive interface features canhave a length greater than a width. An electrical interconnect can be inelectrical communication with the integrated device, the electricalinterconnect extending from the first element to the second element. Theelectrical interconnect can extend through the interveningnon-conductive interface feature between the first and second conductiveinterface features.

In another embodiment, a bonded structure comprises a first elementhaving a first pattern of repeating shapes formed from conductive lineson an exterior surface of the first element. The first pattern cancomprise a first conductive interface feature spaced apart by a firstspacing from a second conductive interface feature, a firstnon-conductive interface feature being disposed between the first andsecond conductive interface features. The first conductive interfacefeature can have a first width that is greater than the first spacing.The bonded structure can comprise a second element having a secondpattern of repeating shapes formed from conductive lines on an exteriorsurface of the second element. The second pattern can comprise a thirdconductive interface feature spaced apart by a second spacing from afourth conductive interface feature. A second non-conductive interfacefeature can be disposed between the third and fourth conductiveinterface features, the third conductive interface feature having asecond width that is greater than the second spacing. The first andsecond conductive interface features can be bonded to the third andfourth conductive interface features to define an interface structure.The first and second patterns can be laterally offset relative to oneanother but delimiting a continuous conductive bond region along theinterface structure.

In another embodiment, a bonded structure is disclosed. The bondedstructure can include a first element and a second element. Anintegrated device can be coupled to or formed with the first element orthe second element. An interface structure can be disposed between thefirst element and the second element. The interface structure cancomprise a first conductive interface feature laterally enclosing theintegrated device. The conductive interface feature can continuouslyextend between the first and second elements to form at least one of anelectrical, mechanical, or thermal connection between the two elements.A non-conductive interface feature can continuously extend between thefirst and second elements.

For purposes of summarizing the disclosed embodiments and the advantagesachieved over the prior art, certain objects and advantages have beendescribed herein. Of course, it is to be understood that not necessarilyall such objects or advantages may be achieved in accordance with anyparticular embodiment. Thus, for example, those skilled in the art willrecognize that the disclosed implementations may be embodied or carriedout in a manner that achieves or optimizes one advantage or group ofadvantages as taught or suggested herein without necessarily achievingother objects or advantages as may be taught or suggested herein.

All of these embodiments are intended to be within the scope of thisdisclosure. These and other embodiments will become readily apparent tothose skilled in the art from the following detailed description of theembodiments having reference to the attached figures, the claims notbeing limited to any particular embodiment(s) disclosed. Although thiscertain embodiments and examples have been disclosed herein, it will beunderstood by those skilled in the art that the disclosedimplementations extend beyond the specifically disclosed embodiments toother alternative embodiments and/or uses and obvious modifications andequivalents thereof. In addition, while several variations have beenshown and described in detail, other modifications will be readilyapparent to those of skill in the art based upon this disclosure. It isalso contemplated that various combinations or sub-combinations of thespecific features and aspects of the embodiments may be made and stillfall within the scope. It should be understood that various features andaspects of the disclosed embodiments can be combined with, orsubstituted for, one another in order to form varying modes of thedisclosed implementations. Thus, it is intended that the scope of thesubject matter herein disclosed should not be limited by the particulardisclosed embodiments described above, but should be determined only bya fair reading of the claims that follow.

1. (canceled)
 2. A bonded structure comprising: a first semiconductorelement including first conductive features and first non-conductivefeatures; a second semiconductor element including second conductivefeatures and second non-conductive features, the second semiconductorelement comprising an integrated device, the first semiconductor elementdirectly bonded to the second semiconductor element such that the firstconductive features are directly bonded to corresponding secondconductive features without an intervening adhesive layer and the firstnon-conductive features are directly bonded to corresponding secondnon-conductive features without an intervening adhesive; and a crackstopper structure extending vertically through a portion of the secondsemiconductor element, the crack stopper structure including alternatingwider and narrower segments.
 3. The bonded structure of claim 2, whereinthe crack stopper structure is in contact with at least one of thesecond conductive features.
 4. The bonded structure of claim 3, whereinthe first and second conductive features form an effectively closedprofile around the integrated device, the effectively closed profilesubstantially sealing an interior region of the bonded structureincluding the integrated device from gas diffusion.
 5. The bondedstructure of claim 4, wherein the first and second conductive featuresdefine a closed shape continuously surrounding the interior region. 6.The bonded structure of claim 2, wherein the crack stopper structureextends around a perimeter of the second semiconductor element.
 7. Thebonded structure of claim 2, wherein the second semiconductor elementcomprises back-end-of-line interconnect structures that has a low Kdielectric material, and wherein the crack stopper structure is formedwithin the low K dielectric material of the back-end-of-lineinterconnect structures.
 8. The bonded structure of claim 2, wherein thecrack stopper structure comprises separate vertical segments formed ofmultiple metallization levels and connected to form a continuousvertical feature surrounding a central region of the secondsemiconductor element.
 9. The bonded structure of claim 2, wherein thefirst conductive features of the first semiconductor element furthercomprises a first closed annular conductive feature extendingcontinuously around the integrated device.
 10. The bonded structure ofclaim 9, wherein the first closed annular conductive feature is directlybonded to a second closed annular conductive feature of the secondsemiconductor element without an intervening adhesive to form a directlybonded annular conductive feature.
 11. The bonded structure of claim 9,wherein the first semiconductor element comprises a plurality of firstclosed annular conductive features extending continuously around theintegrated device.
 12. The bonded structure of claim 2, wherein thefirst and second conductive features includes electrical interconnectsto provide electrical connection between the first and secondsemiconductor elements
 13. A bonded structure comprising: a firstsemiconductor element including at least one first conductive featureextending vertically into the first semiconductor element, a firstnon-conductive feature, and a first electrical component in an interiorregion of the bonded structure, the at least one first conductivefeature comprising an effectively closed profile around the firstelectrical component; a second semiconductor element including at leastone second conductive feature extending vertically into the secondsemiconductor element, and a second non-conductive feature; and a crackstopper structure extending vertically through a portion of the secondsemiconductor element, the crack stopper structure including alternatingwider and narrower segments, wherein the first semiconductor element isbonded to the second semiconductor element such that the at least onefirst conductive feature is bonded to the at least one second conductivefeature and the first non-conductive feature is bonded to correspondingsecond non-conductive feature; wherein a first electrical interconnectof the first semiconductor element and a second electrical interconnectof the second semiconductor element are bonded to one another within theinterior region, the first and second electrical interconnects providingelectrical connection between the first electrical component and thesecond semiconductor element.
 14. The bonded structure of claim 13,wherein the second semiconductor element comprises back-end-of-lineinterconnect structures, and the crack stopper structure extendsvertically from the at least one second conductive feature through theback-end-of-line interconnect structures of the second semiconductorelement.
 15. The bonded structure of claim 14, wherein the crack stopperstructure extends around a perimeter of the second semiconductorelement.
 16. The bonded structure of claim 15, wherein the first andsecond conductive features define a closed shape continuouslysurrounding the interior region.
 17. The bonded structure of claim 13,wherein the first semiconductor element comprises a first bonding layerincluding the at least one first conductive feature and the firstnon-conductive feature, and the second semiconductor element comprises asecond bonding layer including the at least one second conductivefeature and the second non-conductive feature.
 18. The bonded structureof claim 17, wherein the first and second bonding layers comprisenitrogen terminations at a bonding interface.
 19. The bonded structureof claim 18, wherein the first and second non-conductive features of thefirst and second bonding layers comprise silicon oxide, and the at leastone first and second conductive features of the first and second bondinglayers comprise metal.
 20. The bonded structure of claim 13, wherein theat least one first conductive feature comprises a plurality of laterallyspaced apart first conductive feature portions with intervening firstnon-conductive feature, and the at least one second conductive featurecomprises a plurality of laterally spaced apart second conductivefeature portions with intervening second non-conductive feature.
 21. Thebonded structure of claim 13, wherein: the at least one first conductivefeature is directly bonded to the at least one second conductive featurewithout an intervening adhesive and the first non-conductive feature isdirectly bonded to corresponding second non-conductive feature withoutan intervening adhesive; and the first electrical interconnect of thefirst semiconductor element and the second electrical interconnect ofthe second semiconductor element are directly bonded to one anotherwithin the interior region without an intervening adhesive.